Characterization of H-related defects in H-implanted Si with slow positrons

被引：16

作者：

Fujinami, M

Suzuki, R

Ohdaira, T

Mikado, T

机构：

[1] Nippon Steel Corp Ltd, Adv Technol Res Labs, Kawasaki, Kanagawa 211, Japan

[2] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 149卷 / 1-4期

关键词：

H ion implantation; H-V defects; annealing behavior; positron beams;

D O I：

10.1016/S0169-4332(99)00198-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The thermal behavior of H-related defects in H-implanted Si has been investigated by positron beams. It is found that positrons are sensitive to the H-related defects and give a relatively low S parameter, equivalent to that of bulk Si, and a long lifetime. It is found that the defects terminated by H are stabilized up to 400 degrees C and that high void density can be achieved at the narrow layer around the peak of H-implantation profile. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：188 / 192

页数：5

共 17 条

[1]

AERS GC, 1990, POSITRON BEAMS SOLID, V218, P162

[2]

AUBERTONHERVE AJ, 1995, SOLICON ON INSULATOR

[3] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].