Thin film growth of transparent p-type CuAlO2

被引：77

作者：

Stauber, RE ^{[1
]}

Perkins, JD

Parilla, PA

Ginley, DS

机构：

[1] Univ Colorado, Boulder, CO 80309 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 12期

关键词：

D O I：

10.1149/1.1390938

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Recent results suggest that CuAlO2 may be a p-type transparent conductor, but thin film synthesis is difficult because of the complex Cu: Al:O phase diagram. We report a robust method of making c-axis oriented CuAlO2 thin films. Thin film precursors of CuAlO2 were deposited on sapphire (001) substrates by radio-frequency sputtering and by pulsed-laser deposition. Subsequent annealing in air at 1050 degrees C in a closed crucible containing Al2O3 and CuO powders yielded nearly phase-pure, biaxially textured CuAlO2. The films were p-type and transparent with a gap of 3.5 eV. (C) 1999 The Electrochemical Society. S1099-0062(99)08-006-2. All rights reserved.

引用

页码：654 / 656

页数：3

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