Positron studies of defects in ion-implanted SiC

被引:121
作者
Brauer, G
Anwand, W
Coleman, PG
Knights, AP
Plazaola, F
Pacaud, Y
Skorupa, W
Stormer, J
Willutzki, P
机构
[1] UNIV E ANGLIA, SCH PHYS, NORWICH NR4 7TJ, NORFOLK, ENGLAND
[2] EUSKAL HERRIKO UNIBERTSITATEA, ELEKT & ELEKT SAILA, BILBAO 48080, SPAIN
[3] ROSSENDORF INC, FORSCHUNGSZENTRUM ROSSENDORF EV, INST IONENSTRAHLPHYS & MAT FORSCH, D-01314 DRESDEN, GERMANY
[4] UNIV MUNICH, INST NUKL FESTKORPERPHYS, D-85577 MUNICH, GERMANY
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 05期
关键词
D O I
10.1103/PhysRevB.54.3084
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Radiation damage caused by the implantation of 200 keV Ge+ ions into 6H-SiC has been studied by monoenergetic positron Doppler broadening and lifetime techniques, Specimens exposed to seven ion fluences ranging rein 10(16) to 10(19) m(-2), together with unirradiated samples, were studied. The depth of the damaged crystalline layer was found to range from about 300 to 600 nm and, for ion fluences above 3 x 10(17) m(-2), an amorphous layer is seen whose thickness increases to 133 nm at the highest fluence. Positron Lifetime mea surements, in combination with theoretical calculations, suggest that the main;defect produced is the divacancy, bur that Si monovacancies we also, created. In the amorphous surface layer larger agglomerates consisting of at least four but more probably six vacancies are detected. Trapping rates are evaluated as a function of incident positron energy by applying the positron trapping model to the data. Values for defect concentrations in the damaged layers of about 50 ppm are deduced by invoking plausible assumptions; the problem of extracting defect profiles from the data is discussed.
引用
收藏
页码:3084 / 3092
页数:9
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