Resistivity reduction and chemical stabilization ct organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma

被引:48
作者
Danek, M [1 ]
Liao, M [1 ]
Tseng, J [1 ]
Littau, K [1 ]
Saigal, D [1 ]
Zhang, H [1 ]
Mosely, R [1 ]
Eizenberg, M [1 ]
机构
[1] TECHNION ISRAEL INST TECHNOL,DEPT MAT ENGN,IL-32000 HAIFA,ISRAEL
关键词
D O I
10.1063/1.116213
中图分类号
O59 [应用物理学];
学科分类号
摘要
In situ, nitrogen rf plasma treatment of organometallic chemical vapor deposited (OMCVD) TiN, synthesized by thermal decomposition of tetrakis(dimethylamido) titanium, yielded films with low resistivity and enhanced chemical stability. A sequential OMCVD-plasma treatment process allowed deposition of films with bulk resistivity as low as 400 mu Omega cm. The nitridation resulted in reduction of the carbon concentration in the films, and crystallization of TiN. The composition and electrical properties of the nitridized films were found to be stable upon air exposure. The films possess excellent step coverage (>70% in 0.35 mu m device structures with aspect ratio similar to 3) and low defect density (similar to 0.06 cm(-2) for defect size greater than or equal to 0.2 mu m). (C) 1996 American Institute of Physics.
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收藏
页码:1015 / 1016
页数:2
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