Role of hydrogen in doping of GaN

被引：299

作者：

Neugebauer, J ^{[1
]}

Van de Walle, CG ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 13期

关键词：

D O I：

10.1063/1.116027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the interactions between hydrogen and dopant impurities in GaN, using state-of-the-art first-principles calculations. Our results for energetics and migration reveal a fundamental difference in the behavior of hydrogen between p-type and n-type material; in particular, we explain why hydrogen concentrations in n-type GaN are low, and why hydrogen has a beneficial effect on acceptor incorporation in p-type GaN. Our results identify the conditions under which hydrogen can be used to control doping in semiconductors in general. (C) 1996 American Institute of Physics.

引用

页码：1829 / 1831

页数：3

共 13 条

[1] AKASAKI I, 1991, J LUMIN, V48-9, P666
[2] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
AMANO, H
KITO, M
HIRAMATSU, K
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
[3] GOTZ W, 1995, APPL PHYS LETT, V67, P2666, DOI 10.1063/1.114330
[4] ROLE OF NATIVE DEFECTS IN WIDE-BAND-GAP SEMICONDUCTORS
LAKS, DB
VAN DE WALLE, CG
NEUMARK, GF
PANTELIDES, ST
[J]. PHYSICAL REVIEW LETTERS, 1991, 66 (05) : 648 - 651
[5] P-TYPE ZINCBLENDE GAN ON GAAS SUBSTRATES
LIN, ME
XUE, G
ZHOU, GL
GREENE, JE
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (07) : 932 - 933
[6] Moustakas T. D., 1993, Semiconductor Heterostructures for Photonic and Electronic Applications Symposium, P753
[7] HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS
NAKAMURA, S
IWASA, N
SENOH, M
MUKAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A): : 1258 - 1266
[8] NEUGEBAUER J, 1995, MATER RES SOC SYMP P, V378, P503, DOI 10.1557/PROC-378-503
[9] HYDROGEN IN GAN - NOVEL ASPECTS OF A COMMON IMPURITY
NEUGEBAUER, J
VAN DE WALLE, CG
[J]. PHYSICAL REVIEW LETTERS, 1995, 75 (24) : 4452 - 4455
[10] ATOMIC GEOMETRY AND ELECTRONIC-STRUCTURE OF NATIVE DEFECTS IN GAN
NEUGEBAUER, J
VAN DE WALLE, CG
[J]. PHYSICAL REVIEW B, 1994, 50 (11): : 8067 - 8070

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