共 43 条
Solution processable organic p-n junction bilayer vertical photodiodes
被引:10
作者:

Kong, Hoyoul
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机构:
Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
KRICT, Ulsan 681802, South Korea Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

Sinha, Jasmine
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Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

Hoeft, Daniel
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机构:
Tech Univ Chemnitz, Inst Print & Media Technol, D-09126 Chemnitz, Germany Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

Kirschner, Stuart B.
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机构:
Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

Reich, Daniel H.
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Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

Katz, Howard E.
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Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
Johns Hopkins Univ, Dept Chem, Baltimore, MD 21218 USA Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
机构:
[1] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA
[2] Johns Hopkins Univ, Dept Chem, Baltimore, MD 21218 USA
[3] KRICT, Ulsan 681802, South Korea
[4] Tech Univ Chemnitz, Inst Print & Media Technol, D-09126 Chemnitz, Germany
[5] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA
基金:
美国国家科学基金会;
关键词:
p-n Junction;
Bilayer;
Photodiode;
Poly(chlorostyrene);
PCBM;
THIN-FILM TRANSISTORS;
POLYMER SOLAR-CELLS;
FIELD-EFFECT TRANSISTORS;
MAIN-CHAIN;
POLYFLUORENE COPOLYMERS;
PHOTOVOLTAIC DEVICES;
PHOTODETECTORS;
POLY(3-HEXYLTHIOPHENE);
DERIVATIVES;
EFFICIENCY;
D O I:
10.1016/j.orgel.2012.12.008
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Organic p-n bilayer photodiodes were produced by solution casting poly(3-hexylthiophene) (P3HT) from chlorobenzene and phenyl-C-61-butyric acid methyl ester (PCBM):poly(4-chlorostyrene) (PClS) blends from the nearly orthogonal solvent dichloromethane onto flexible indium tin oxide (ITO)/polyester as a substrate. This is the first demonstration of PCBM-inert polymer blends for such a device. The electron mobility of a 90% PCBM-10% PClS blend was 3.5 x 10(-3) cm(2)/V s in a field-effect transistor. The diodes showed a rectification ratio of 2.0 x 10(3) at +/- 2.0 V with a forward bias current density as high as 340 mu A/cm(2) at 2.0 V in the dark. Irradiation with various light sources (0.013-291 mW/cm(2)) under ambient atmosphere generated a linear increase in photocurrent. Photodiodes with thinner active layers showed larger photocurrent and relative photoresponse, probably because of lower series resistance and lower recombination probability. The reverse bias response was less dependent on device area than the forward bias response. Photocurrents from multiple devices in parallel were additive as expected. The results demonstrate a simple fabrication route to light detectors compatible with solution processes and flexible substrates. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:703 / 710
页数:8
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