2e2/h to e2/h switching of quantum conductance associated with a change in nanoscale ferromagnetic domain structure

被引:116
作者
Ono, T
Ooka, Y
Miyajima, H
Otani, Y
机构
[1] Keio Univ, Fac Sci & Technol, Dept Phys, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan
[2] Tohoku Univ, Sch Engn, Dept Mat Sci, Aoba Ku, Sendai, Miyagi 9808579, Japan
关键词
D O I
10.1063/1.124774
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the electrical conductance quantization in a Ni nanowire formed in a break junction between a ferromagnetic Ni wire and a Ni plate in applied magnetic fields. The conductance of the nanowire is clearly quantized in units of 2e(2)/h in a zero magnetic field, but it is switched to e(2)/h by applying magnetic fields above 60 Oe. This switching behavior seems closely related to a ferromagnetic domain formation in the vicinity of a nanowire, suggesting that nanoscale magnetic domain walls play an important role in determining nanoscale spin-dependent transport. The effect offers the possibility of a new device, a nanoscale colossal magnetoresistive sensor. (C) 1999 American Institute of Physics. [S0003-6951(99)00537-9].
引用
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页码:1622 / 1624
页数:3
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