Formation of SiC via carbothermal reduction of a carbon-containing mesoporous MCM-48 silica phase: a new route to produce high surface area SiC

被引:101
作者
Parmentier, J
Patarin, J
Dentzer, J
Vix-Guterl, C
机构
[1] Univ Haute Alsace, Lab Mat Mineraux, Ecole Natl Super Chim Mullhouse, UPRES A 7016, F-68093 Mulhouse, France
[2] Inst Chim Surfaces & Interfaces, F-68057 Mulhouse, France
关键词
silicon carbide; high surface area; catalyst support; mesorganized carbon phase; MCM-48; silica;
D O I
10.1016/S0272-8842(01)00050-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Infiltration of carbon into mesoporous silica, used as a host structure, was peformed for the preparation of high surface area SiC. Mesopores of MCM-48 silica material were filled with pyrolytic carbon by chemical vapor infiltration using propylene as carbon precursor. Carbothermal reduction of the as-prepared SiO2/C material in a temperature range 1250-1450 degreesC and in inert atmosphere led to an almost complete conversion into high surface area SiC material (120 m(2)/g). Characterisations were performed by SEM, powder XRD, DRIFT spectroscopy and N-2 adsorption/desorption measurements on the SiC, SiO2/C and the mesorganized carbon phase. (C) 2002 Elsevier Science Ltd and Techna S.r.l. All rights reserved.
引用
收藏
页码:1 / 7
页数:7
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