Characterization of TiO2 nanocrystalline thin film by scanning tunneling microscopy and scanning tunneling spectroscopy

被引：15

作者：

Lin, Y ^{[1
]}

Lin, RF ^{[1
]}

Wang, WB ^{[1
]}

Xiao, XR ^{[1
]}

机构：

[1] Acad Sinica, Inst Photog Chem, Beijing 100101, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 1999年 / 143卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

TiO2 nanocrystalline thin film; scanning tunneling microscopy; scanning tunneling spectroscopy;

D O I：

10.1016/S0169-4332(98)00928-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

TiO2 nanocrystalline semiconductor films have been studied by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The presence of interconnected TiO2 nanocrystallites with mean diameters of 30 nm and different size of pores wen indicated in the STM images. Surface structural features were characterized by fractal dimension analysis in terms of surface roughness. Tunneling current vs, bias and differential conductance spectra were measured for as prepared and air-stood nanocrystalline thin films. The results obtained by statistical analysis show that surface bandgap energy of TiO2 nanocrystallites of as prepared thin film was 3.10 +/- 0.08 eV and quite different surface bandgap energy of 1.76 +/-: 0.19 eV was observed for TiO2 nanocrystallites in air-stored thin film. Negative shifts of onset potential of differential conductance in both negative and positive bias and the presence of surface states at 1.59 +/- 0.16 V for TiO2 nanocrystallites of air-stored thin films revealed a difference in surface electronic properties for both TiO2 nanocrystalline thin films. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：169 / 173

页数：5

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