Theory of metal-insulator transitions in gated semiconductors - Reply

被引：16

作者：

Altshuler, BL

Maslov, DL

机构：

[1] NEC Res Inst, Princeton, NJ 08540 USA

[2] Princeton Univ, Dept Phys, Princeton, NJ 08544 USA

[3] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

来源：

关键词：

D O I：

10.1103/PhysRevLett.83.2092

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2092 / 2092

页数：1

共 9 条

[1] Theory of metal-insulator transitions in gated semiconductors
Altshuler, BL
Maslov, DL
[J]. PHYSICAL REVIEW LETTERS, 1999, 82 (01) : 145 - 148
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[4] Theory of metal-insulator transitions in gated semiconductors - Comment
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Sarachik, MP
Simonian, D
[J]. PHYSICAL REVIEW LETTERS, 1999, 83 (10) : 2091 - 2091
[5] MASLOV DL, IN PRESS
[6] MILLS AP, CONDMAT9905176
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Winkler, R
[J]. SCIENCE, 1999, 283 (5410) : 2056 - 2058
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