Chemically deposited photovoltaic structure using antimony sulfide and silver antimony selenide absorber films

被引：24

作者：

Bindu, K ^{[1
]}

Nair, MTS

Das Roy, TK

Nair, PK

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Dept Solar Energy Mat, Temixco 62580, Morelos, Mexico

[2] Univ Autonoma Nuevo Leon, Fac Ingn Mecan & Elect, San Nicolas De Los Garza 66450, Nuevo Leon, Mexico

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 06期

关键词：

D O I：

10.1149/1.2186428

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A photovoltaic structure, glass/SnO2:F/n-CdS/Sb2S3/p-AgSbSe2/Ag-print, showing V-oc 550 mV and J(sc) 2.3 mA/cm(2) under 1 kW/m(2) (tungsten halogen) intensity has been developed on commercial SnO2:F-coated glass from chemically deposited thin films of CdS (80 nm), Sb2S3 (450 nm), and Ag2Se (150 nm), and subsequently heating the layer at 200-300 degrees C in contact with a chemically deposited Se thin film. The reaction between Sb2S3 and Ag2Se in the Se vapor forms p-type AgSbSe2 thin film with a bandgap approximate to 1 eV. The methodology for preparing all-chemically deposited photovoltaic structures at process temperatures 300 degrees C or below presented here is compatible with solar cell technology.

引用

页码：G195 / G199

页数：5

共 19 条

[1] Semiconducting tin selenide thin films prepared by heating Se-Sn layers [J].