Light emission microscopy for thin oxide reliability analysis

被引：21

作者：

Leroux, C

Blachier, D

Briere, O

Reimbold, G

机构：

[1] CTR NATL ETUD TELECOMMUN,CNS,F-38243 MEYLAN,FRANCE

[2] MATRA MHS TEMIC,F-44306 NANTES 03,FRANCE

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(97)00066-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a wide analysis of light emission phenomenon in thin gate oxide. For thickness ranging from 45 to 230 Angstrom, we study the dependence of photon emission rate with gate oxide thickness and gate materials. Soft breakdown occurring in ultra thin oxide is also analysed.

引用

页码：297 / 300

页数：4

共 11 条

[1] BRIERE O, IN PRESS SOLID STATE
[2] DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE
BRORSON, SD
DIMARIA, DJ
FISCHETTI, MV
PESAVENTO, FL
SOLOMON, PM
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1302 - 1313
[3] Chiang C., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P672
[4] DEKORT K, 1990, ESREF, P45
[5] Depas M., 1995, ESSDERC '95. Proceedings of the 25th European Solid State Device Research Conference, P235
[6] KHURANA N, 1984, IEEE IRPS, P122
[7] SWITCHING AND BREAKDOWN IN FILMS
KLEIN, N
[J]. THIN SOLID FILMS, 1971, 7 (3-4) : 149 - +
[8] KOLZER J, 1991, ESREF, P625
[9] LEE SH, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P605, DOI 10.1109/IEDM.1994.383337
[10] SALOMON P, 1976, J APPL PHYS, V47, P1023

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