Spin relaxation of conduction electrons

被引:157
作者
Fabian, J [1 ]
Das Sarma, S [1 ]
机构
[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 04期
关键词
D O I
10.1116/1.590813
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Prospect of building electronic devices in which electron spins store and transport information has revived interest in the spin relaxation of conduction electrons. Since spin-polarized currents cannot flow indefinitely, basic spin-electronic devices must be smaller than the distance electrons diffuse without losing its spin memory. Some recent experimental and theoretical effort has been devoted to the issue of modulating the spin relaxation. It has been shown, for example, that in certain materials doping, alloying, or changing dimensionality can reduce or enhance the spin relaxation by several orders of magnitude. This brief review presents these efforts in the perspective of the current understanding of the spin relaxation of conduction electrons in nonmagnetic semiconductors and metals. (C) 1999 American Vacuum Society. [S0734-211X(99)03604-5].
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页码:1708 / 1715
页数:8
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