Spin injection in metals: The bipolar spin transistor

被引：29

作者：

Johnson, M

机构：

[1] Naval Research Lab, Washington, DC

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1996年 / 156卷 / 1-3期

关键词：

D O I：

10.1016/0304-8853(95)00883-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transport equations for spin transistor action, appropriate for realistic models of materials and interfaces, are developed from a detailed microscopic model. Experimental results from prototypes are summarized in the context of device applications. Using spin injection to study spin accumulation in superconducting films is discussed.

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页码：321 / 324

页数：4

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