The role of interfaces in Damascene phase-change memory

被引：45

作者：

Kencke, David L. ^{[1
]}

Karpov, Ilya V.

Johnson, Brian G.

Lee, Sean Jong

Kau, DerChang

Hudgens, Stephen J. ^{[2
]}

Reifenberg, John P. ^{[3
]}

Savransky, Semyon D.

Zhang, Jingyan

Giles, Martin D. ^{[1
,4
]}

Spadini, Gianpaolo

机构：

[1] Intel Corp, Hillsboro, OR 97124 USA

[2] Ovonyx Inc, Santa Clara, CA USA

[3] Stanford Univ, Stanford, CA 94305 USA

[4] Intel Corp, Santa Clara, CA 95051 USA

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418936

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Phase change memory (PCM) research has largely focused on bulk properties to evaluate cell efficiency. Now both electrical and thermal interface resistances are characterized and shown to be critical for understanding power in a novel Damascene-GST cell. Interfaces reduce reset power 20% and reset current 40% and allow reset current to scale faster than it would without interfaces.

引用

页码：323 / +

页数：2

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