Thermal hydrosilylation of undecylenic acid with porous silicon

被引:155
作者
Boukherroub, R
Wojtyk, JTC
Wayner, DDM
Lockwood, DJ
机构
[1] Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
D O I
10.1149/1.1432679
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The thermal reaction of undecylenic acid with a hydrogen-terminated porous silicon surface takes place at 95degreesC to yield an organic monolayer covalently attached to the surface through Si-C bonds. The acid terminal group remains intact and is not affected by the chemical process. Under the same conditions, alcohols break the Si-Si back bonds of the PSi matrix. In contrast, the acid function does not react with either the Si-H or the Si-Si bonds of the PSi surface and the reaction takes place at the terminal C v C double bond of the molecule. When the reaction was carried out with decanoic acid, under the same conditions, the reaction was not complete. The functionalized surfaces were characterized using transmission infrared and X-ray photoelectron spectroscopies. The effect of the chemical process on the photoluminescence has been studied, and the stability against corrosion in 100% humidity was verified using chemography. We have demonstrated that the derivatized surface with undecylenic acid can be activated by a simple chemical route using N-hydroxysuccimide in the presence of N-ethyl-N'-(3-dimethylaminopropyl) carbodiimide hydrochloride. (C) 2002 The Electrochemical Society.
引用
收藏
页码:H59 / H63
页数:5
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