The fabrication of silicon nanostructures by local gallium implantation and cryogenic deep reactive ion etching

被引：77

作者：

Chekurov, N. ^{[1
,2
]}

Grigoras, K. ^{[1
,2
]}

Peltonen, A. ^{[2
,3
]}

Franssila, S. ^{[1
,2
]}

Tittonen, I. ^{[1
,2
]}

机构：

[1] Helsinki Univ Technol, Dept Micro & Nanosci, FI-02015 Helsinki, Finland

[2] Helsinki Univ Technol, Ctr New Mat, FI-02015 Helsinki, Finland

[3] Helsinki Univ Technol, TKK Micronova, FI-02015 Helsinki, Finland

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 06期

关键词：

Ion implantation - Nanostructures - Reactive ion etching - Fabrication - Cryogenics - Silicon - Focused ion beams - Gallium - Plasma etching;

D O I：

10.1088/0957-4484/20/6/065307

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We show that gallium-ion-implanted silicon serves as an etch mask for fabrication of high aspect ratio nanostructures by cryogenic plasma etching (deep reactive ion etching). The speed of focused ion beam (FIB) patterning is greatly enhanced by the fact that only a thin approx. 30 nm surface layer needs to be modified to create a mask for the etching step. Etch selectivity between gallium-doped and undoped material is at least 1000: 1, greatly decreasing the mask erosion problems. The resolution of the combined FIB-DRIE process is 20 lines mu m(-1) with the smallest masked feature size of 40 nm. The maximum achieved aspect ratio is 15: 1 (e. g. 600 nm high pillars 40 nm in diameter).

引用

页数：5

共 8 条

[1] The mechanism of the ion beam inhibited etching formation in Gallium-FIB implanted resist films [J].