Thermally activated magnetization reversal in submicron magnetic tunnel junctions for magnetoresistive random access memory

被引：77

作者：

Rizzo, ND ^{[1
]}

DeHerrera, M ^{[1
]}

Janesky, J ^{[1
]}

Engel, B ^{[1
]}

Slaughter, J ^{[1
]}

Tehrani, S ^{[1
]}

机构：

[1] Motorola Labs, Phys Sci Res Labs, Tempe, AZ 85284 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 13期

关键词：

Activation energy - Tunnel junctions - Random access storage;

D O I：

10.1063/1.1462872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured thermally activated magnetization reversal of the free layers in submicron magnetic tunnel junctions to be used for magnetoresistive random access memory. We applied magnetic field pulses to the bits with a pulse duration t(p) ranging from nanoseconds to 0.1 ms. We have measured the switching probability as a function of t(p) with a fixed field amplitude H, and as a function of H for fixed t(p). For both cases, we find good agreement with the switching probability predicted by the Arrhenius-Neel theory for thermal activation over a single energy barrier. (C) 2002 American Institute of Physics.

引用

页码：2335 / 2337

页数：3

共 13 条

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