Growth of passivating CuBTA films on copper in aqueous chloride/benzotriazole solutions

被引：37

作者：

Tromans, D ^{[1
]}

Li, GH

机构：

[1] Univ British Columbia, Dept Met & Mat Engn, Vancouver, BC V6T 1Z4, Canada

[2] Cominco Ltd, Cominco Res, Trail, BC V1R 4S4, Canada

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 02期

关键词：

D O I：

10.1149/1.1430365

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The growth of cuprous benzotriazole films (CuBTA), formed on Cu monocrystals and vapor deposited films under controlled potential conditions ( +0.040 V-SHE) in 1 M NaCl + 5.6 x 10(-3) M 1-H benzotriazole, has been studied by measurement of electrical charge. Film growth follows a direct logarithmic relationship to similar to25 nm thickness and effects of crystallographic orientation are insignificant. Variations in film growth under similar test conditions are attributed to variations in the randomness of CuBTA polymers in the film. A limiting film thickness is predicted, after which slow dissolution occurs without further thickening. (C) 2001 The Electrochemical Society.

引用

页码：B5 / B8

页数：4

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