Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime

被引：81

作者：

Ellmers, C

Höhnsdorf, F

Koch, J

Agert, C

Leu, S

Karaiskaj, D

Hofmann, M

Stolz, W

Rühle, WW

机构：

[1] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

[2] Univ Marburg, Wissensch Zentrum Mat Wissensch, D-35032 Marburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期

关键词：

D O I：

10.1063/1.123821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(GaIn)(NAs) vertical-cavity surface-emitting lasers for room-temperature emission at 1.3 mu m wavelength are designed and grown by metal-organic vapor-phase epitaxy using dimethylhydrazine and tertiarybutylarsine. Room-temperature operation at wavelengths up to 1.285 mu m is achieved with low optical pumping thresholds between 1.6 and 2.0 kW/cm(2). Stimulated emission dynamics after femtosecond optical pumping are measured and compare favorably with results on (GaIn)As/Ga(PAs)-based structures. (C) 1999 American Institute of Physics. [S0003-6951(99)03416-6].

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页码：2271 / 2273

页数：3

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