Cu(In1-xGax)S2 thin-film solar cells with efficiency above 12%, fabricated by sulfurization

被引：14

作者：

Ohashi, T ^{[1
]}

Hashimoto, Y ^{[1
]}

Ito, K ^{[1
]}

机构：

[1] Shinshu Univ, Fac Engn, Dept Elect & Elect Engn, Nagano 3808553, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 7A期

关键词：

thin film; solar cell; Cu(In1-xGax)S-2; rapid thermal process; sulfurization;

D O I：

10.1143/JJAP.38.L748

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An efficient thin-film photovoltaic cell has been fabricated using a heterostructure consisting of a Cu(In1-xGax)S-2 absorber layer obtained by sulfurization of a Cu-In-GaS precursor, a chemical-bath-deposited CdS buffer layer and an rf-magnetron sputtered In2O3 window layer The growth of hillocks was observed on the surface of the absorber layer when the precursor was heated to the sulfurization temperature (550 degrees C) at the rate of 7 degrees C/min. According to energy-dispersive X-ray analysis, the hillocks, which cause the deterioration of cell performance, are composed of an indium-rich compound. Their growth could. be prevented if the heating rate were greatly increased, particularly in a temperature range between 300 degrees C and 550 degrees C, using a rapid thermal process. A conversion efficiency of up to 12.3% has been achieved with a hillock-free Cu(In1-xGax)S-2 thin film.

引用

页码：L748 / L750

页数：3

共 4 条

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[2] Cu(In1-xGax)S2 thin films prepared by sulfurization of precursors consisting of metallic and gallium sulfide layers [J].

Ohashi, T ;

Wakamori, M ;

Hashimoto, Y ;

Ito, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12A) :6530-6534

[3]

Shay J., 1975, Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications

[4]

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