Stress relief structures for ion-beam projection lithography masks

被引：5

作者：

Tejeda, R

Engelstad, R

Lovell, E

Haugeneder, E

Löschner, H

机构：

[1] Computational Mechanics Center, University of Wisconsin-Madison, Madison, WI 53706

[2] Ionen Mikrofabrikations Systeme GmbH, A-1020, Vienna

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 46卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0167-9317(99)00045-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Next Generation Lithography (NGL) will require masks with high resolution and positioning accuracy to meet the requirements for sub-0.13 mu m technology. This paper focuses on the design and development of low distortion stencil masks for ion-beam projection lithography. With the stencil mask structure, one source of pattern placement errors is the in-plane distortion which occurs during the pattern transfer process. To address this issue, the use of stress relief structures to minimize distortion within the pattern area has been proposed. Results of the mechanical analysis, design, and optimization of these structures are presented.

引用

页码：481 / 484

页数：4