A new quantitative model to predict SILC-related disturb characteristics in Flash E(2)PROM devices

被引：29

作者：

DeBlauwe, J

VanHoudt, J

Wellekens, D

Degraeve, R

Roussel, P

Haspeslagh, L

Deferm, L

Groeseneken, G

Maes, HE

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.553599

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new quantitative model is developed that allows an excellent prediction of the disturb behavior of tunnel oxide Flash E(2)PROM devices after write/erase cycling and provides a well-understood and consistent cell optimization procedure. This model requires as only input a measurement of the oxide quality on capacitors and transistors, and some basic cell characteristics.

引用

页码：343 / 346

页数：4