Enhanced amorphous silicon technology for 320x240 microbolometer arrays with a pitch of 35μm

被引：30

作者：

Mottin, E ^{[1
]}

Martin, JL ^{[1
]}

Ouvrier-Buffet, JL ^{[1
]}

Vilain, M ^{[1
]}

Bain, A ^{[1
]}

Yon, JJ ^{[1
]}

Tissot, JL ^{[1
]}

Chatard, JP ^{[1
]}

机构：

[1] LETI, CEA, G DOPT LIR, F-38054 Grenoble 9, France

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXVII | 2001年 / 4369卷

关键词：

microbolometer; amorphous silicon; focal plane array; packaging;

D O I：

10.1117/12.445293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LETI LIR has been involved in Amorphous Silicon uncooled microbolometer development for years. This technology is now in production at Sofradir and first delivery have already been done to customers. From our background in modelling and material mastering LETI/LIR concentrate now on performance enhancement. This is a key point for cost reduction due to the fact that signal to noise ratio enhancement will allow us to decrease the pitch. A new approach of packaging is also described in this paper and first results are displayed. A new technological stack of amorphous silicon fully compatible with industrial process is presented. Electro-optical results obtained from an IRCMOS 320x240 with 35mum pitch are presented. NETD close to 35 mK has been obtained with our new embodiment of amorphous silicon microbolometer technology.

引用

页码：250 / 256

页数：7