Frequency-dependent electrical response of holes in poly(p-phenylene vinylene)

被引:253
作者
Martens, HCF
Brom, HB
Blom, PWM
机构
[1] Leiden Univ, Kamerlingh Onnes Lab, NL-2300 RA Leiden, Netherlands
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 12期
关键词
D O I
10.1103/PhysRevB.60.R8489
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transport of holes in poly(p-phenylene vinylene) has been studied as a function of frequency, temperature, de bias, and polymer thickness. For such a low mobility material we demonstrate that the specific frequency dependence of the response reflects the wide distribution in transit times of the injected carriers due to dispersive transport. The de mobility is shown to correspond to the average of this dispersion and follows the empirical ln(mu(dc)) proportional to root E law.
引用
收藏
页码:R8489 / R8492
页数:4
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