Electrical properties of light-emitting devices based on the II-VI compounds BeTe and BeMgZnSe

被引：7

作者：

Fischer, F

Laubender, J

Lugauer, HJ

Litz, T

Weingartner, A

Zehnder, U

Gerhard, T

Ossau, W

Schull, K

Waag, A

Landwehr, G

机构：

[1] Physikalisches Institut, 97074 Würzburg, Am Hubland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 43卷 / 1-3期

关键词：

semiconductors; laser diodes; molecular beam epitaxy;

D O I：

10.1016/S0921-5107(96)01839-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Light-emitting diodes with BeMgZnSe cladding layers and an active region formed by a ZnSe, BeZnSe or BeZnSeTe single quantum well are characterized by means of current-voltage measurements and electroluminescence at room temperature. A longterm stability exceeding 4000 h has been estimated in first experiments at low current densities (15 A cm(-2)). The emission wavelength was tuned between 452 and 518 nm by varying the composition of the quantum well material. Additionally, first results on the n-type doping of BeMgZnSe during molecular beam epitaxy have been obtained. The properties of ohmic contacts to n-type epilayers are discussed. (C) 1997 Elsevier Science S.A.

引用

页码：92 / 96

页数：5

共 14 条

[1]

BLOMFIELD CJ, 1995, INT C 2 4 SEM ED SCO

[2] BONDING AND IONICITY IN SEMICONDUCTORS [J].

CHRISTENSEN, NE ;

SATPATHY, S ;

PAWLOWSKA, Z .

PHYSICAL REVIEW B, 1987, 36 (02) :1032-1050

[3] DESIGN OF OHMIC CONTACTS TO P-ZNSE [J].

DANDREA, RG ;

DUKE, CB .

APPLIED PHYSICS LETTERS, 1994, 64 (16) :2145-2147

[4]

FERREIRA SO, 1995, MATER SCI FORUM, V182-, P77, DOI 10.4028/www.scientific.net/MSF.182-184.77

[5] HOLE-ELECTRON PRODUCT OF PN JUNCTIONS [J].

GUMMEL, HK .

SOLID-STATE ELECTRONICS, 1967, 10 (03) :209-&

[6]

ISHIBASHI A, 1996, INT S BLUE LAS LIGHT, P113

[7] GENERATION OF DEGRADATION DEFECTS, STACKING-FAULTS, AND MISFIT DISLOCATIONS IN ZNSE-BASED FILMS GROWN ON GAAS [J].

KUO, LH ;

SALAMANCARIBA, L ;

WU, BJ ;

HAUGEN, GM ;

DEPUYDT, JM ;

HOFLER, G ;

CHENG, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1694-1704

[8]

LITZ T, 1996, E MRS SPRING M STRAS

[9]

LUGAUER HJ, 1996, E MRS SPRING M STRAS

[10] BETE ZNSE GRADED BAND-GAP OHMIC CONTACTS TO P-ZNSE [J].

MENSZ, PM .

APPLIED PHYSICS LETTERS, 1994, 64 (16) :2148-2150

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