Piezoelectric response of engineered domains in ferroelectrics

被引:23
作者
Ahluwalia, R [1 ]
Lookman, T
Saxena, A
Cao, W
机构
[1] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA
[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
[3] Penn State Univ, Dept Math, University Pk, PA 16802 USA
关键词
D O I
10.1063/1.1737059
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the formation of engineered ferroelectric domains in two dimensions based on a continuum approach that incorporates the long-range elastic and electrostatic interactions. The model is also used to simulate the piezoelectric properties of the engineered domain configurations and the response is compared with that of an analogous single domain state. The results show that the low field piezoelectric constants for the engineered configuration are very close to those obtained for the corresponding single domain state and the domain wall influence is not significant. For high fields, domain walls act as nucleation sites for an electric field induced structural transition. (C) 2004 American Institute of Physics.
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页码:3450 / 3452
页数:3
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