ZnO diode fabricated by excimer-laser doping

被引：732

作者：

Aoki, T

Hatanaka, Y

Look, DC

机构：

[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 22期

关键词：

D O I：

10.1063/1.126599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A ZnO diode was fabricated by using a laser-doping technique to form a p-type ZnO layer on an n-type ZnO substrate. A zinc-phosphide compound, used as a phosphorous source, was deposited on the ZnO wafer and subjected to excimer-laser pulses. The current-voltage characteristics showed a diode characteristic between the phosphorous-doped p-layer and the n-type substrate. Moreover, light emission, with a band-edge component, was observed by forward current injection at 110 K. (C) 2000 American Institute of Physics. [S0003-6951(00)02722-4].

引用

页码：3257 / 3258

页数：2

共 11 条

[1] Aoki T, 1998, BLUE LASER AND LIGHT EMITTING DIODES II, P78
[2] Surface processing of CdTe compound semiconductor by excimer laser doping
Hatanaka, Y
Niraula, M
Aoki, Y
Aoki, T
Nakanishi, Y
[J]. APPLIED SURFACE SCIENCE, 1999, 142 (1-4) : 227 - 232
[3] Heavily doped p-type ZnSe layer formation by excimer laser doping
Hatanaka, Y
Aoki, T
Arakawa, T
Noda, D
Nakanishi, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 425 - 428
[4] ELECTRON SPIN RESONANCE STUDIES OF DONORS AND ACCEPTORS IN ZNO
KASAI, PH
[J]. PHYSICAL REVIEW, 1963, 130 (03): : 989 - &
[5] Excimer laser doping technique for application in an integrated CdTe imaging device
Mochizuki, D
Niraula, M
Aoki, T
Tomita, Y
Nihashi, T
Hatanaka, Y
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 436 (1-2) : 127 - 131
[6] MOCHIZUKI D, IN PRESS J CRYST GRO
[7] SUSCAVAGE M, 1999, MRS INTERNET J NITRI
[8] Vanheusden K, 1996, APPL PHYS LETT, V68, P403, DOI 10.1063/1.116699
[9] Mechanisms behind green photoluminescence in ZnO phosphor powders
Vanheusden, K
Warren, WL
Seager, CH
Tallant, DR
Voigt, JA
Gnade, BE
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7983 - 7990
[10] Dynamics of photoexcited carriers in ZnO epitaxial thin films
Yamamoto, A
Kido, T
Goto, YF
Chen, Y
Yao, T
Kasuya, A
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (04) : 469 - 471

← 1 2 →