Spin and orbital occupation and phase transitions in V2O3

被引:205
作者
Park, JH
Tjeng, LH
Tanaka, A
Allen, JW
Chen, CT
Metcalf, P
Honig, JM
de Groot, FMF
Sawatzky, GA
机构
[1] Univ Michigan, Randall Lab, Ann Arbor, MI 48109 USA
[2] AT&T Bell Labs, Murray Hill, NJ 07974 USA
[3] Brookhaven Natl Lab, Upton, NY 11973 USA
[4] Univ Michigan, Randall Lab, Ann Arbor, MI 48109 USA
[5] Univ Groningen, Ctr Mat Sci, Solid State Phys Lab, NL-9747 AG Groningen, Netherlands
[6] Hiroshima Univ, Fac Sci, Dept Mat Sci, Higashihiroshima 724, Japan
[7] Purdue Univ, Dept Chem, W Lafayette, IN 47907 USA
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 17期
关键词
D O I
10.1103/PhysRevB.61.11506
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polarization dependent x-ray-absorption measurements were performed on pure and Cr-doped V2O3 single crystals in the antiferromagnetic insulating, paramagnetic insulating, and metallic phases. The orbital occupation of the V 3d(2) ion is found to depend appreciably on the phase, but always with the S= 1 character, requiring an explanation which is beyond the elegant simplicity of the pure one-band Hubbard model or of models in which the a(1g) orbital is projected out by means of a simple dimerization. The results reveal the critical role of the spin and orbital dependence of the on-site 3d-3d Coulomb energy, and a mechanism is proposed to explain the closing or opening of the band gaps which are of much higher energy scale than the transition temperatures.
引用
收藏
页码:11506 / 11509
页数:4
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