Comparison of deposition behavior of Pb(Zr,Ti)O3 films and its end-member-oxide films prepared by MOCVD

Pb(Zr,Ti)O-3(PZT) and end-member single oxide, PbO, ZrO2 and TiO2, films were deposited by metalorganic chemical vapor deposition (MOCVD) from Pb(C11H19O2)(2)-Zr(O.t-C4H9)(4)-Ti(O.i-C3H7)(4)-O-2 system, Pb(C11H19O2)(2)-O-2 system, Zr(O.t-C4H9)(4)-O-2 system and Ti(O.i-C3H7)(4)-O-2 system, respectively. The deposition rates of PbO, TiO2 and ZrO2 components in PZT films were investigated as a function of the deposition temperature. The deposition rates of each components in PZT films were quite different from those of PbO, ZrO2 and TiO2 films. However, the deposition temperature dependencies of the deposition rates of TiO2 and ZrO2 components in PZT films were almost the same. This resulted in that the Zr/(Zr + Ti) in the film was almost independent of the deposition temperature. On the other hand, the deposition temperature dependency of the deposition rate of PbO component in PZT film was different from those of ZrO2 and TiO2 components. This resulted in that Pb/(Pb + Zr + Ti) in PZT film depended on the deposition temperature. The deposition temperature dependencies of PbO and TiO2 components in PbTiO3 film were not the same and Pb/(Pb + Ti) in PbTiO3 films also depended on the deposition temperature. (C) 2000 Elsevier Science S.A. All rights reserved.