Simple model for the dielectric constant of nanoscale silicon particle

被引:102
作者
Tsu, R
Babic, D
Ioriatti, L
机构
[1] UNIV ILLINOIS, DEPT COMP SCI & ELECT ENGN, CHICAGO, IL 60607 USA
[2] UNIV SAO PAULO, INST FIS, SAO CARLOS, SP, BRAZIL
关键词
D O I
10.1063/1.365762
中图分类号
O59 [应用物理学];
学科分类号
摘要
As the physical size approaches several nanometers, reduction in the static dielectric constant epsilon becomes significant. A modified Penn model, taking into account the quantum confinement induced discrete energy states, was applied to a sphere and to a wire, The calculated size dependent epsilon is consistent with the wave-vector-dependent epsilon(q). However, this form of epsilon is more amenable for calculations of donor and exciton binding energies in a finite quantum confined nanoparticle when a full electrostatic boundary value problem must be tackled. The results of our model compare favorably with other, far more sophisticated, calculations. (C) 1997 American Institute of Physics.
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页码:1327 / 1329
页数:3
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