Electrical conduction through the surface-state band of the Si(111)-root 21x root 21-(Ag+Au) structure

被引：34

作者：

Jiang, CS ^{[1
]}

Tong, X ^{[1
]}

Hasegawa, S ^{[1
]}

Ino, S ^{[1
]}

机构：

[1] UNIV TOKYO,DEPT PHYS,SCH SCI,BUNKYO KU,TOKYO 113,JAPAN

来源：

SURFACE SCIENCE | 1997年 / 376卷 / 1-3期

关键词：

angle-resolved photoemission spectroscopy; reflection high-energy electron diffraction (RHEED); silicon; surface electrical transport; surface electronic phenomena; surface structure; X-ray photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(96)01569-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Si(111)-root 21x root 21 superstructure, which was induced by 0.14 atomic layer Au adsorption onto the Si(111)-root 3x root 3-Ag surface at room temperature, was found to have a very high surface electrical conductance, higher than that of the Si(111)-7x7 clean surface by about 3.1x10(-4) A/V. Photoemission spectroscopies showed that this root 21 structure had a dispersive surface-state band crossing the Fermi level, while the surface space-charge layer was a depletion layer. It was thus concluded that the observed excess surface conductance was due to the two-dimensional band of the surface electronic state. (C) 1997 Elsevier Science B.V.

引用

页码：69 / 76

页数：8

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