Single-chip surface micromachined integrated gyroscope with 50°/h allan deviation

被引：183

作者：

Geen, JA ^{[1
]}

Sherman, SJ ^{[1
]}

Chang, JF ^{[1
]}

Lewis, SR ^{[1
]}

机构：

[1] Analog Devices Inc, Micromachine Prod Div, Cambridge, MA 02139 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2002年 / 37卷 / 12期

关键词：

BiMOS analog circuits; constant gm FETs; gyros; high-impedance synthesis; microelectromechanical systems (MEMS); translinear loops;

D O I：

10.1109/JSSC.2002.804345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design principles of a mass-produced surface micromachined gyroscope are described. The device is integrated on a single 3 nun x 3 nun chip with a 3-mum BiCMOS process. It has a 4-mum-thick polysilicon structure, 5-V 6-mA supply, 12.5-mV/degrees/s sensitivity, 10 000 : 1 dynamic range, 30 000-gee shock survival, and -55 degreesC to +85 degreesC operating temperature.

引用

页码：1860 / 1866

页数：7