Reversible hysteresis loop tuning

被引:13
作者
Berger, A
Binek, C
Margulies, DT
Moser, A
Fullerton, EE
机构
[1] Hitachi Global Storage Technol, San Jose Res Ctr, San Jose, CA 95120 USA
[2] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
关键词
hysteresis; hysteresis tuning; AEC media; magnetic thin films;
D O I
10.1016/j.physb.2005.10.040
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We utilize antiferromagnetically coupled bilayer structures to magnetically tune hysteresis loop properties. Key element of this approach is the non-overlapping switching field distribution of the two magnetic layers that make up the system: a hard magnetic CoPtCrB layer (HL) and a soft magnetic CoCr layer (SL). Both layers are coupled antiferromagnetically through an only 0.6-nm-thick Ru interlayer. The non-overlapping switching field distribution allows the measurement of magnetization reversal in the SL at low fields while keeping the magnetization state of the HL unperturbed. Applying an appropriate high field or high field sequence changes the magnetic state of the HL, which then influences the SL magnetization reversal due to the interlayer coupling. In this way, the position and shape of the SL hysteresis loop can be changed or tuned in a fully reversible and highly effective manner. Here, we study specifically how the SL hysteresis loop characteristics change as we move the HL through an entire high field hysteresis loop sequence. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:168 / 172
页数:5
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