An Improved IGBT Short-Circuit Protection Method With Self-Adaptive Blanking Circuit Based on VCE Measurement

被引:58
作者
Chen, Min [1 ]
Xu, Dehong [1 ]
Zhang, Xingyao [2 ]
Zhu, Nan [1 ]
Wu, Junxiong [1 ]
Rajashekara, Kaushik [3 ]
机构
[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
[2] TP Link Technol Co Ltd, Shenzhen 518057, Peoples R China
[3] Univ Houston, Houston, TX 77204 USA
基金
中国国家自然科学基金;
关键词
Blanking circuit; IGBT; self-adaptive; short-circuit protection; V-CE measurement; GATE DRIVER; SCHEME;
D O I
10.1109/TPEL.2017.2747587
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];
摘要
IGBT short-circuit protection is the key factor to improve the reliability of the power electronics system. The conventional short-circuit protection method based on V-CE measurement detects the collector-emitter voltage of an IGBT to determine whether the IGBT short-circuit fault occurs. The blanking circuit is needed in this kind of protection method to avoid the false triggering of the short-circuit protection during IGBT turn-on transient. However, this blanking circuit should be carefully designed for different types of IGBT modules. In order to make the IGBT short-circuit protection circuit suitable for the tolerance of IGBT modules, a self-adaptive blanking circuit combined with the aforementioned short-circuit protection method based on V-CE measurement is proposed. The proposed method is achieved by feeding back the required minimum blanking time interval which is decided by comparing the desaturation reference voltage with the collector-emitter voltage. The short-circuit protection delay time for the conventional circuit and the proposed circuit are compared. Experimental results are included to prove the effectiveness of the proposed circuit.
引用
收藏
页码:6126 / 6136
页数:11
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