High conduction-band offset of AlInAsSb InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy

被引：11

作者：

Chang, JR

Su, YK ^{[1
]}

Lin, CL

Wu, KM

Lu, YT

Jaw, DH

Shiao, HP

Lin, W

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan

[3] Wu Feng Inst TEchnol & Commerce, Dept Elect Engn, Chiyi 621, Taiwan

[4] Minister Transportat & Commun, Telecommun Lab, Photon Technol Res, Tao Yuan 326, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 23期

关键词：

D O I：

10.1063/1.124141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Unstrained Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As multiple-quantum-well (MQW) structures have been grown by metalorganic vapor phase epitaxy. Low-temperature photoluminescence was performed for these MQW structures. We compared the experimental data with the theoretical calculations. The conduction-band offset ratio of AlInAsSb/InGaAs heterojunction was set as an adjustable parameter in the theoretical model. We estimated the conduction-band offset ratio to be 0.90+/-0.05 for the Al0.66In0.34As0.85Sb0.15/In0.53Ga0.47As heterojunction. (C) 1999 American Institute of Physics. [S0003-6951(99)04823-8].

引用

页码：3495 / 3497

页数：3

共 14 条

[1] BAND-GAPS AND REFRACTIVE-INDEXES OF ALGAASSB, GAINASSB, AND INPASSB - KEY PROPERTIES FOR A VARIETY OF THE 2-4-MU-M OPTOELECTRONIC DEVICE APPLICATIONS [J].