Interband transitions and band gap measurements in Bloch transistors

被引:40
作者
Flees, DJ
Han, SY
Lukens, JE
机构
[1] Department of Physics, State University of New York at Stony Brook, Stony Brook, NY
关键词
D O I
10.1103/PhysRevLett.78.4817
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have measured the switching current from the supercurrent branch of Bloch (superconducting single electron) transistors. Switching events occurring from the ground and first excited bands can be distinguished, allowing the band index of the system to be determined, thus giving the first direct evidence of the predicted excited bands. Both thermally assisted and microwave induced transitions have been observed. The latter provide a direct measurement of the band gap, which agrees well with theoretical predictions using independent estimates of the capacitance.
引用
收藏
页码:4817 / 4820
页数:4
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