Photoluminescence characterization of SiGe QW grown by MBE

被引：1

作者：

DePadova, P

Perfetti, P

Felici, R

Priori, S

Quaresima, C

Pizzoferrato, R

Casalboni, M

Prosposito, P

Corni, F

Tonini, R

Grilli, A

Raco, A

机构：

[1] UNIV ROMA TOR VERGATA,DIPARTIMENTO INGN MECCAN,ROME,ITALY

[2] UNIV ROMA TOR VERGATA,DIPARTIMENTO FIS,ROME,ITALY

[3] UNIV ROMA TOR VERGATA,INFM,ROME,ITALY

[4] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY

[5] IST NAZL FIS NUCL,LNF,FRASCATI,ROME,ITALY

来源：

JOURNAL OF LUMINESCENCE | 1997年 / 72-4卷

关键词：

photoluminescence; MBE; SiGe; quantum well;

D O I：

10.1016/S0022-2313(96)00203-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Photoluminescence (PL) emission spectra have been carried out on a partially relaxed Si/Si1-xGex/Si quantum well (QW) grown by solid-source MBE at a nominal composition of x = 17%, The results are discussed in terms of the film morphology, as derived from structural techniques (SEM, RHEED, RES and XRD): especially as regards the presence of a high density of dots-like 3D structures. PL spectra show an intense brood band, attributed to excitonic recombinations at interstitial plateletes in the dots, with smaller X-NP and X-TO excitonic lines due to phonon-resolved interband transitions originated from the strained epitaxyal layer grown before the dot formation.

引用

页码：324 / 326

页数：3