Light-emitting diodes with 17% external quantum efficiency at 622 Mb/s for high-bandwidth parallel short-distance optical interconnects

被引:10
作者
Windisch, RH
Knobloch, A
Potemans, J
Dutta, B
Döhler, GH
Borghs, G
Heremans, PL
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Univ Erlangen Nurnberg, D-91058 Erlangen, Germany
关键词
electromagnetic scattering by rough surfaces; light-emitting diodes; optical interconnections; light sources; thin-film devices;
D O I
10.1109/2944.778275
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on nonresonant cavity light-emitting diodes (NRC-LED) with large quantum efficiencies and high speed. A maximum quantum efficiency of 31% is measured for a device with an active layer thickness of 120 nm, and 18.7% for a device having an active layer of 30 nm, Further, we report on optical rise and fall times of NRC-LED's. Even when switched to current levels below 4 mA, at which the external quantum efficiency exceeds 17%, our NRC-LED'S have 10%-90% rise and fall times of less than 2 ns, As a result, eye diagrams taken at this current level at 622 Mb/s are wide open. This demonstrates the suitability of high-efficiency NRC-LED's for optical interconnects, Finally, from a system's viewpoint it is important to note that the optical output power of NRC-LED's decreases by only 0.36%/degrees C.
引用
收藏
页码:166 / 171
页数:6
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