Experimental and computational studies of phase shift lithography with binary elastomeric masks

被引:24
作者
Maria, J [1 ]
Malyarchuk, V [1 ]
White, J [1 ]
Rogers, JA [1 ]
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Dept Chem, Beckman Inst Adv Sci & Technol,Frederick Seitz Ma, Urbana, IL 61801 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 02期
基金
美国国家科学基金会;
关键词
D O I
10.1116/1.2184321
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents experimental and computational studies of a phase shifting photolithographic technique that uses binary elastomeric phase masks in conformal contact with layers of photoresist. The work incorporates optimized masks formed by casting and curing prepolymers to the elastomer poly(dimethylsiloxane) against anisotropically etched structures of single crystal silicon on SiO2/Si. Scanning optical microscopy and full-vector finite element computations reveal the important near field and proximity optical effects. Representative structures fabricated with this technique, including several that exploit subtle features in the intensity distributions, illustrate some of the capabilities. (c) 2006 American Vacuum Society.
引用
收藏
页码:828 / 835
页数:8
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