Giant negative magnetoresistance in GdI2:: Prediction and realization

被引:79
作者
Felser, C
Ahn, K
Kremer, RK
Seshadri, R
Simon, A
机构
[1] Univ Mainz, Inst Anorgan Chem & Analyt Chem, D-55099 Mainz, Germany
[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
关键词
D O I
10.1006/jssc.1999.8274
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The electronic structure of the layered d(1) compound GdI2 has been examined systematically in view of its relation to other layered d(1) systems including superconducting and isostructural 2H-TaS2 and 2H-NbSe2. A van Hove type instability is evident in suitable representations of the Fermi surface, The presence of the half-filled and magnetic 4f level should preclude the possibility of superconductivity. Instead GdI2 orders ferromagnetically at 290(5)K and displays large negative magnetoresistance approximate to 70% at 7 T close to room temperature, This finding provides support to the idea that materials can be searched rationally for interesting properties through high level electronic structure calculations. (C) 1999 Academic Press.
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页码:19 / 25
页数:7
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