Synthesis and study of optical and structural properties of thin films based on new photovoltaic materials

被引：28

作者：

Gordillo, G. ^{[1
]}

Botero, M. ^{[1
]}

Oyola, J. S. ^{[1
]}

机构：

[1] Univ Nacl Colombia, Dept Fis, Bogota, Colombia

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 11期

关键词：

SnS thin films; Bi(2)S(3) thin films; Optical properties; Structural properties;

D O I：

10.1016/j.mejo.2008.01.034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have synthesized SnS:Bi thin films using a novel method based Oil sulphurization of the metallic precursors species. The films were characterized through spectral transmittance and X-ray diffraction (XRD) measurements to determine both, the optical constants and structural properties. The studies revealed that the SnS:Bi films tend to grow with a mixture of the SnS and Bi(2)S(3) phases. It was also found that the SnS:Bi films present ail absorption coefficient greater than 10(4) cm(-1) and ail energy band gap ranging From 1.37 to 1.47eV, indicating that thiS compound has good properties to perform as absorber layer in thin film solar cells. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1351 / 1353

页数：3