Self-limited growth of a thin oxide layer on Rh(111) -: art. no. 126102

被引：180

作者：

Gustafson, J

Mikkelsen, A

Borg, M

Lundgren, E

Köhler, L

Kresse, G

Schmid, M

Varga, P

Yuhara, J

Torrelles, X

Quirós, C

Andersen, JN

机构：

[1] Lund Univ, Dept Synchrotron Radiat Res, S-22100 Lund, Sweden

[2] Inst Mat Phys, A-1090 Vienna, Austria

[3] Ctr Computat Mat Sci, A-1090 Vienna, Austria

[4] Vienna Tech Univ, Inst Allgemeine Phys, A-1040 Vienna, Austria

[5] Nagoya Univ, Dept Phys Sci & Engn, Nagoya, Aichi 4648603, Japan

[6] CSIC, Inst Ciencia Mat Barcelona, E-08193 Barcelona, Spain

[7] European Synchrotron Radiat Facil, F-38043 Grenoble, France

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.92.126102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The oxidation of the Rh(111) surface at oxygen pressures from 10(-10) mbar to 0.5 bar and temperatures between 300 and 900 K has been studied on the atomic scale using a multimethod approach of experimental and theoretical techniques. Oxidation starts at the steps, resulting in a trilayer O-Rh-O surface oxide which, although not thermodynamically stable, prevents further oxidation at intermediate pressures. A thick corundum like Rh2O3 bulk oxide is formed only at significantly higher pressures and temperatures.

引用

页码：126102 / 1

页数：4

共 20 条

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