Polarization switching in Pb(Zn1/3Nb2/3)O3-5%PbTiO3 crystals

被引:8
作者
Lee, JK [1 ]
Yi, JY
Hong, KS
Park, SE
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[2] Fraunhofer IBMT Technol Ctr Hialeah, Hialeah, FL 33010 USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 11期
关键词
Pb(Zn1/3Nb2/3)O-3-5%PbTiO3 crystal; polarization switching; activation field; sideway growth; domain nucleation; domain wall energy;
D O I
10.1143/JJAP.40.6506
中图分类号
O59 [应用物理学];
学科分类号
摘要
The polarization switching mechanism as a function of crystallographic orientation in Pb(Zn1/3Nb2/3)O-3-5%PbTiO3 (PZN-5%PT) single crystals was investigated using the switching current measurement technique. Both the activation E-field and tire critical pulse width were greater if E-field for polarization switching was applied along the polar axis < 111 > than applied along < 001 >. The sideward growth was dominant in domain switching of < 111 > oriented crystals. The dominance of the nucleation and forward growth behavior was observed in < 001 > oriented crystals. The nucleation probability of reverse polarized domains is expected to be much greater in < 001 > crystals than in < 111 > crystals, being ascribed to the lower projected polarization value along the E-field direction. higher domain wall energy associated with the pseudo-monoclinic structure of domains, and large domain wall density as a consequence of averaged domain configuration. This domain switching anisotropy may be one of the origins of the fatigue anisotropy.
引用
收藏
页码:6506 / 6509
页数:4
相关论文
共 22 条
[1]   Domain switching and spatial dependence of permittivity in ferroelectric thin films [J].
Chai, FK ;
Brews, JR ;
Schrimpf, RD ;
Birnie, DP .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2505-2516
[2]   GRAIN-SIZE EFFECTS IN FERROELECTRIC SWITCHING [J].
DUIKER, HM ;
BEALE, PD .
PHYSICAL REVIEW B, 1990, 41 (01) :490-495
[3]   THEORETICAL CONSIDERATIONS ON SWITCHING TRANSIENT IN FERROELECTRICS [J].
FATUZZO, E .
PHYSICAL REVIEW, 1962, 127 (06) :1999-&
[4]   SWITCHING MECHANISM IN TRIGLYCINE SULFATE AND OTHER FERROELECTRICS [J].
FATUZZO, E ;
MERZ, WJ .
PHYSICAL REVIEW, 1959, 116 (01) :61-68
[5]  
Fatuzzo E., 1967, FERROELECTRICITY, P197
[6]  
Gopalan V, 1999, SOLID STATE COMMUN, V109, P111, DOI 10.1016/S0038-1098(98)00509-2
[7]   High resolution study of domain nucleation and growth during polarization switching in Pb(Zr,Ti)O3 ferroelectric thin film capacitors [J].
Hong, S ;
Colla, EL ;
Kim, E ;
Taylor, DV ;
Tagantsev, AK ;
Muralt, P ;
No, K ;
Setter, N .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :607-613
[8]   Domain inversion in ferroelectric MgO:LiNbO3 by applying electric fields [J].
Kuroda, A ;
Kurimura, S ;
Uesu, Y .
APPLIED PHYSICS LETTERS, 1996, 69 (11) :1565-1567
[9]   NANOSECOND SWITCHING OF THIN FERROELECTRIC-FILMS [J].
LARSEN, PK ;
KAMPSCHOER, GLM ;
ULENAERS, MJE ;
SPIERINGS, GACM ;
CUPPENS, R .
APPLIED PHYSICS LETTERS, 1991, 59 (05) :611-613
[10]  
LEE JK, UNPUB J APPL PHYS