PbZr0.52Ti0.48O3 and SrBi2Nb2O9 ferroelectric oxides integrated with YBa2Cu3O7 superconductor in multilayers epitaxially grown by pulsed laser deposition

被引:4
作者
Duclère, J
Guilloux-Viry, M
Perrin, A
Soyer, C
Cattan, E
Remiens, D
Dauscher, A
Weber, S
Lenoir, B
机构
[1] Univ Rennes 1, Chim Solide & Inorgan Mol Lab, CNRS, UMR 6511,Inst Chim Rennes, F-35042 Rennes, France
[2] MIMM Dept, F-59600 Maubeuge, France
[3] Ecole Mines, CNRS, LPM, UMR 7556,UHP,INPL, F-54042 Nancy, France
来源
JOURNAL DE PHYSIQUE IV | 2001年 / 11卷 / PR11期
关键词
D O I
10.1051/jp4:20011104
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Multilayers of PbZr0.52Ti0.48O3 (PZT) or SrBi2Nb2O9 (SBN) ferroelectrics (F) and YBa2Cu3O7 (YBaCuO) superconductor (S) have been grown by pulsed laser deposition. F/S or S/F bilayers as well as S/F/S trilayers deposited on SrTiO3 and MgO were epitaxially grown, as evidenced by x-ray diffraction (XRD) in theta-2theta and phi-scans modes, reflection high energy electron diffraction (RHEED) or electron channeling patterns (ECP). Superconducting YBaCuO Films deposited on PZT exhibit a critical temperature, T-c, of about 86 K slightly below the value routinely obtained in the same deposition conditions on bare (100)SrTio(3) substrate (typically 88-89 K). By contrast, the T-c of YBaCuO films on SBN, either on (100)SrTiO3 or on (100)MgO is close to 88-89 K suggesting that SBN can be a good candidate as ferroelectric buffer layer for the growth of YBaCuO, especially on MgO for which a graphoepitaxial mechanism tends to limit the YBaCuO growth quality. In the case of F/S layers, hysteresis loops of PZT on YBaCuO show a saturated polarization larger than 30 muC/cm(2) and a coercive field of about 70 kV/cm. Secondary ion mass spectrometry (SIMS) experiments have been performed in order to correlate interdiffusion mechanisms with both structural data and physical properties.
引用
收藏
页码:29 / 33
页数:5
相关论文
共 10 条
[1]   Epitaxial ferroelectric/superconductor heterostructures [J].
Boikov, YA ;
Ivanov, ZG ;
Olsson, E ;
Claeson, T .
PHYSICA C, 1997, 282 :111-114
[2]   EPITAXIAL-GROWTH AND PROPERTIES OF YBA2CU3OX-PB(ZR0.6TI0.4)O3-YBA2CU3OX TRILAYER STRUCTURE BY LASER ABLATION [J].
BOIKOV, YA ;
ESAYAN, SK ;
IVANOV, ZG ;
BRORSSON, G ;
CLAESON, T ;
LEE, J ;
SAFARI, A .
APPLIED PHYSICS LETTERS, 1992, 61 (05) :528-530
[3]   Correlation between microwave surface resistance, AC susceptibility and in-plane ordering in YBa2Cu3O7 thin films epitaxially grown on (100) MgO substrates [J].
Castel, X ;
GuillouxViry, M ;
Perrin, A ;
Thivet, CL ;
Debuigne, J .
PHYSICA C, 1995, 255 (3-4) :281-292
[4]   FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].
DEARAUJO, CAP ;
CUCHIARO, JD ;
MCMILLAN, LD ;
SCOTT, MC ;
SCOTT, JF .
NATURE, 1995, 374 (6523) :627-629
[5]  
DUCLERE JR, IN PRESS APPL SURF S
[6]   CRYSTAL-GROWTH OF (110) YBA2CU3O7 AND (103) YBA2CU3O7 THIN-FILMS IN-SITU DEPOSITED BY LASER-ABLATION ON (110) SRTIO3 SINGLE-CRYSTAL SUBSTRATES [J].
GUILLOUXVIRY, M ;
THIVET, C ;
PERRIN, A ;
SERGENT, M ;
KARKUT, MG ;
ROSSEL, C ;
CATANA, A .
JOURNAL OF CRYSTAL GROWTH, 1993, 132 (3-4) :396-404
[7]   EFFECTS OF CRYSTALLINE QUALITY AND ELECTRODE MATERIAL ON FATIGUE IN PB(ZR, TI)O3 THIN-FILM CAPACITORS [J].
LEE, J ;
JOHNSON, L ;
SAFARI, A ;
RAMESH, R ;
SANDS, T ;
GILCHRIST, H ;
KERAMIDAS, VG .
APPLIED PHYSICS LETTERS, 1993, 63 (01) :27-29
[8]   A proposal of epitaxial oxide thin film structures for future oxide electronics [J].
Suzuki, M ;
Ami, T .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 41 (01) :166-173
[9]  
1996, MRS B, V21
[10]  
1991, IEEE T MICROWAVE THE, V39