Optimum MOS power matching by exploiting non-quasistatic effect

被引：5

作者：

Janssens, J ^{[1
]}

Steyaert, M ^{[1
]}

机构：

[1] Katholieke Univ Leuven, ESAT, MICAS, B-3001 Heverlee, Belgium

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 08期

关键词：

D O I：

10.1049/el:19990432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-noise and power amplifiers commonly use inductive degeneration to match the inherently capacitive MOS device to the source impedance R-S. It is shown how this matching technique can be refined by incorporating the nonquasistatic effect and further improved so as to strongly increase the gain. It is shown that the maximum gain is achieved by matching the source impedance R-S to the intrinsic gate resistance embodying the non-quasistatic effect.

引用

页码：672 / 673

页数：2