Europium-doped gallium nitride prepared by Na flux method

被引:9
作者
Yamada, T
Nanbu, H
Yamane, H
Kohiro, K
Tsuchida, Y
机构
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Matmuladv, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Ctr Interdisciplinary Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[3] Sumitomo Chem Co Ltd, Tsukuba Res Lab, Tsukuba, Ibaraki 3003294, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 4-7期
关键词
GaN; europium doped; single crystal; Na flux method; luminescence;
D O I
10.1143/JJAP.45.L194
中图分类号
O59 [应用物理学];
学科分类号
摘要
An aggregate of Eu-doped GaN columnar crystals was synthesized at 700 degrees C and a N-2 pressure of 5 MPa at the surface of a Na-Ga melt with the addition of Eu metal. The color of the crystals was black at the melt-phase side, and changed to brown to colorless and transparent toward the gas-phase side. Energy-dispersive X-ray analysis revealed that the Eu content was 0.15 at. % at the black part and decreased gradually below < 0.1 at. % at the colorless transparent part. The colorless transparent part glowed red under ultraviolet radiation. A strong emission peak associated with the intra-4f transition of Eu3+ from 5 Do to F-7(2) was observed at 621 nm in the photoluminescence spectrum and at 624 nm in the photoluminescence spectrum.
引用
收藏
页码:L194 / L196
页数:3
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