Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM

被引：197

作者：

Russo, U. ^{[1
]}

Ielmini, D. ^{[1
]}

Cagli, C. ^{[1
]}

Lacaita, A. L. ^{[1
]}

Spiga, S. ^{[2
]}

Wiemer, C. ^{[2
]}

Perego, M. ^{[2
]}

Fanciulli, M. ^{[2
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] CNR, INFM, Lab Nazl MDM, Agrate Brianza, Italy

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4419062

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work presents detailed characterization and modeling of the reset operation in resistive-switching memories based on metal oxides. Our experimental results confirm previous observations that reset is controlled by Joule heating, providing an insight on the electrical and thermal parameters of the conductive filament (CF) in the low resistance state. The characterization of such parameters allows to model the CF rupture responsible for reset switching. Our model explains the switching by self-accelerated dissolution of the CF, and can quantitatively account for reset and data-retention experiments. The scaling of programming current is finally investigated by means of reduction of CF cross-section.

引用

页码：775 / +

页数：2

共 5 条

[1]

Fang T.-N., 2006, IEDM, P1, DOI [10.1109/IEDM.2006.346731, DOI 10.1109/IEDM.2006.346731]

[2]

HOSOI Y, 2006, IEDM, P793

[3] Grain-boundary diffusion of cation vacancies in nickel oxide: A molecular-dynamics study [J].

Karakasidis, T ;

Meyer, M .

PHYSICAL REVIEW B, 1997, 55 (20) :13853-13864

[4] KINETICS OF STRUCTURAL RELAXATIONS IN THE GLASSY SEMICONDUCTOR-A-SE [J].

KASAP, SO ;

YANNACOPOULOS, S .

JOURNAL OF MATERIALS RESEARCH, 1989, 4 (04) :893-905

[5] Electrical observations of filamentary conductions for the resistive memory switching in NiO films [J].

Kim, D. C. ;

Seo, S. ;

Ahn, S. E. ;

Suh, D. -S. ;

Lee, M. J. ;

Park, B. -H. ;

Yoo, I. K. ;

Baek, I. G. ;

Kim, H. -J. ;

Yim, E. K. ;

Lee, J. E. ;

Park, S. O. ;

Kim, H. S. ;

Chung, U-In ;

Moon, J. T. ;

Ryu, B. I. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

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