Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates

被引：25

作者：

Benyoucef, M

Kuball, M

Beaumont, B

Gibart, P

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] CNRS, CRHEA, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 13期

关键词：

D O I：

10.1063/1.1464664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial lateral overgrown (ELO) GaN grown by metalorganic vapor phase epitaxy on Si substrates was characterized using Raman mapping, photoluminescence (PL) experiments and finite element (FE) analysis. Stress in the structures was determined from the E(2) phonon frequency and compared to FE results. Low temperature PL spectra are dominated by donor bound exciton (DBE) emission at (3.457-3.459) eV. PL spectra reveal a peak at similar to3.404 eV in window regions attributed to structural defects in the GaN. Differences in crystalline quality between window and overgrown regions of ELO GaN were investigated. (C) 2002 American Institute of Physics.

引用

页码：2275 / 2277

页数：3

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