X-ray photoelectron spectroscopy of highly conducting and amorphous osmium dioxide thin films

被引：17

作者：

Hayakawa, Y

Fukuzaki, K

Kohiki, S ^{[1
]}

Shibata, Y

Matsuo, T

Wagatsuma, K

Oku, M

机构：

[1] Kyushu Inst Technol, Dept Mat Sci, Kitakyushu, Fukuoka 8048550, Japan

[2] Unitika Res Labs Inc, Kyoto 6110021, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

THIN SOLID FILMS | 1999年 / 347卷 / 1-2期

关键词：

amorphous oxide; osmium dioxides; photoelectron spectroscopy;

D O I：

10.1016/S0040-6090(98)01612-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report characterization of highly conducting and amorphous osmium dioxide thin films. The films deposited by glow discharge of osmium tetroxide showed no peaks in X-ray diffraction and homogeneous distribution of osmium and oxygen atoms in depth profile by Auger electron spectroscopy. The amorphous Os-O films were highly conducting (<5 X 10(-3) Ohm cm), and the conductivity was almost temperature independent. High-resolution X-ray photoelectron spectroscopy revealed that the films were osmium dioxide (OsO2). Argon ion bombardment of the film reduced the Os4+ to metal OsO via a transition state (Os1.6+). (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：56 / 59

页数：4

共 4 条

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